The Susceptibility of 45 and 32 nm Bulk CMOS Latches to Low-Energy Protons

We measured low-energy proton radiation induced soft error rates (SER) of standard and reduced-SER (RSER) latches, manufactured in 32 nm and 45 nm bulk CMOS technologies, and conclude that sequential logic elements built in these technologies are not yet susceptible. Further, our results demonstrate...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2011-12, Vol.58 (6), p.2711-2718
Main Authors: Seifert, N., Gill, B., Pellish, J. A., Marshall, P. W., LaBel, K. A.
Format: Article
Language:English
Subjects:
Aluminum
Charge
CMOS
Ionization
Latches
Logic
Nuclear reactions
Particle beams
Proton energy
Protons
radiation
SER
Silicon on insulator technology
single event
soft error
Soft errors
Voltage measurement
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Summary:We measured low-energy proton radiation induced soft error rates (SER) of standard and reduced-SER (RSER) latches, manufactured in 32 nm and 45 nm bulk CMOS technologies, and conclude that sequential logic elements built in these technologies are not yet susceptible. Further, our results demonstrate that at proton energies where direct ionization dominates, critical charge (Qcrit) plays a far bigger role than at proton energies above the nuclear reaction threshold.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2011.2171004