Irradiation and Temperature Effects for a 32 nm RF Silicon-on-Insulator CMOS Process

The impacts of total ionizing dose (TID), temperature and RF stress on the DC and RF performance of a commercial 32 nm RF silicon-on-insulator CMOS technology are presented. Temperature dependence is the overwhelmingly dominant single factor affecting the DC and RF performance, with the combined eff...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on nuclear science 2014-12, Vol.61 (6), p.3037-3042
Main Authors: Haeffner, T. D., Loveless, T. D., Zhang, E. X., Sternberg, A. L., Jagannathan, S., Schrimpf, R. D., Kauppila, J. S., Alles, M. L., Fleetwood, D. M., Massengill, L. W., Haddad, N. F.
Format: Article
Language:English
Subjects:
CMOS
CMOS process
Degradation
Radiation effects
Radio frequency
s-parameters
Silicon-on-insulator
silicon-on-insulator (SOI)
Temperature measurement
total ionizing dose (TID)
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:The impacts of total ionizing dose (TID), temperature and RF stress on the DC and RF performance of a commercial 32 nm RF silicon-on-insulator CMOS technology are presented. Temperature dependence is the overwhelmingly dominant single factor affecting the DC and RF performance, with the combined effects of elevated temperature and TID showing the most pronounced degradation. The most significant effect due to TID is an increase in off-state leakage current. Key DC and RF parameters of this 32 nm RF process degrade less than those of an otherwise similar 45 nm RF SOI CMOS process. The implications of the combined TID and temperature response are discussed for low-power RF design.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2014.2360455