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Irradiation and Temperature Effects for a 32 nm RF Silicon-on-Insulator CMOS Process
The impacts of total ionizing dose (TID), temperature and RF stress on the DC and RF performance of a commercial 32 nm RF silicon-on-insulator CMOS technology are presented. Temperature dependence is the overwhelmingly dominant single factor affecting the DC and RF performance, with the combined eff...
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| Published in: | IEEE transactions on nuclear science 2014-12, Vol.61 (6), p.3037-3042 |
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| Main Authors: | , , , , , , , , , , |
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| Language: | English |
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| cites | cdi_FETCH-LOGICAL-c361t-9abba0b21ce4852504eaacba8e1ed71fe2d10f0d32ef555be4f1b4f7af2fa833 |
| container_end_page | 3042 |
| container_issue | 6 |
| container_start_page | 3037 |
| container_title | IEEE transactions on nuclear science |
| container_volume | 61 |
| creator | Haeffner, T. D. Loveless, T. D. Zhang, E. X. Sternberg, A. L. Jagannathan, S. Schrimpf, R. D. Kauppila, J. S. Alles, M. L. Fleetwood, D. M. Massengill, L. W. Haddad, N. F. |
| description | The impacts of total ionizing dose (TID), temperature and RF stress on the DC and RF performance of a commercial 32 nm RF silicon-on-insulator CMOS technology are presented. Temperature dependence is the overwhelmingly dominant single factor affecting the DC and RF performance, with the combined effects of elevated temperature and TID showing the most pronounced degradation. The most significant effect due to TID is an increase in off-state leakage current. Key DC and RF parameters of this 32 nm RF process degrade less than those of an otherwise similar 45 nm RF SOI CMOS process. The implications of the combined TID and temperature response are discussed for low-power RF design. |
| doi_str_mv | 10.1109/TNS.2014.2360455 |
| format | article |
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D. ; Loveless, T. D. ; Zhang, E. X. ; Sternberg, A. L. ; Jagannathan, S. ; Schrimpf, R. D. ; Kauppila, J. S. ; Alles, M. L. ; Fleetwood, D. M. ; Massengill, L. W. ; Haddad, N. F.</creator><creatorcontrib>Haeffner, T. D. ; Loveless, T. D. ; Zhang, E. X. ; Sternberg, A. L. ; Jagannathan, S. ; Schrimpf, R. D. ; Kauppila, J. S. ; Alles, M. L. ; Fleetwood, D. M. ; Massengill, L. W. ; Haddad, N. F.</creatorcontrib><description>The impacts of total ionizing dose (TID), temperature and RF stress on the DC and RF performance of a commercial 32 nm RF silicon-on-insulator CMOS technology are presented. Temperature dependence is the overwhelmingly dominant single factor affecting the DC and RF performance, with the combined effects of elevated temperature and TID showing the most pronounced degradation. The most significant effect due to TID is an increase in off-state leakage current. Key DC and RF parameters of this 32 nm RF process degrade less than those of an otherwise similar 45 nm RF SOI CMOS process. The implications of the combined TID and temperature response are discussed for low-power RF design.</description><identifier>ISSN: 0018-9499</identifier><identifier>EISSN: 1558-1578</identifier><identifier>DOI: 10.1109/TNS.2014.2360455</identifier><identifier>CODEN: IETNAE</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>CMOS ; CMOS process ; Degradation ; Radiation effects ; Radio frequency ; s-parameters ; Silicon-on-insulator ; silicon-on-insulator (SOI) ; Temperature measurement ; total ionizing dose (TID)</subject><ispartof>IEEE transactions on nuclear science, 2014-12, Vol.61 (6), p.3037-3042</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) Dec 2014</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c361t-9abba0b21ce4852504eaacba8e1ed71fe2d10f0d32ef555be4f1b4f7af2fa833</citedby><cites>FETCH-LOGICAL-c361t-9abba0b21ce4852504eaacba8e1ed71fe2d10f0d32ef555be4f1b4f7af2fa833</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6935032$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,54796</link.rule.ids></links><search><creatorcontrib>Haeffner, T. D.</creatorcontrib><creatorcontrib>Loveless, T. D.</creatorcontrib><creatorcontrib>Zhang, E. X.</creatorcontrib><creatorcontrib>Sternberg, A. L.</creatorcontrib><creatorcontrib>Jagannathan, S.</creatorcontrib><creatorcontrib>Schrimpf, R. D.</creatorcontrib><creatorcontrib>Kauppila, J. 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| ispartof | IEEE transactions on nuclear science, 2014-12, Vol.61 (6), p.3037-3042 |
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| language | eng |
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| source | IEEE Electronic Library (IEL) Journals |
| subjects | CMOS CMOS process Degradation Radiation effects Radio frequency s-parameters Silicon-on-insulator silicon-on-insulator (SOI) Temperature measurement total ionizing dose (TID) |
| title | Irradiation and Temperature Effects for a 32 nm RF Silicon-on-Insulator CMOS Process |
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