Total Dose Hardness of // Resistive Random Access Memory

Resistive random access memory based on TiN/HfO x /TiN has been fabricated, with the stoichiometry of the HfOx layer altered through control of atomic layer deposition (ALD) temperature. Sweep and pulsed electrical characteristics were extracted before and after 60 Co gamma irradiation. Monoclinic H...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2014-12, Vol.61 (6), p.2991-2996
Main Authors: Morgan, Katrina A., Ruomeng Huang, Potter, Kenneth, Shaw, Chris, Redman-White, William, De Groot, C. H.
Format: Article
Language:English
Subjects:
Atomic layer deposition
Hafnium oxide
ionizing radiation
Radiation effects
Random access memory
resistive RAM
Titanium compounds
Voltage measurement
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Summary:Resistive random access memory based on TiN/HfO x /TiN has been fabricated, with the stoichiometry of the HfOx layer altered through control of atomic layer deposition (ALD) temperature. Sweep and pulsed electrical characteristics were extracted before and after 60 Co gamma irradiation. Monoclinic HfO x deposited at 400 ° C did not result in resistive switching. Deposition at 300 ° C and 350 ° C resulted in cubic HfO x which switched successfully. Both stoichiometric HfO 2 and sub-oxides HfO 2-x result in similar memory characteristics. All devices are shown to be radiation hard up to 10 Mrad(Si), independent of stoichiometry.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2014.2365058