Effects of Total-Ionizing-Dose Irradiation on SEU- and SET-Induced Soft Errors in Bulk 40-nm Sequential Circuits

Synergetic effects of total-ionizing-dose irradiation on the single event upset (SEU) and single event transient (SET) performance of 40-nm sequential circuits are studied at doses up to 2 Mrad(SiO 2 ). The impacts of input pattern and supply voltage are evaluated. An initial increase of SEU- and SE...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2017-01, Vol.64 (1), p.471-476
Main Authors: Chen, R. M., Diggins, Z. J., Mahatme, N. N., Wang, L., Zhang, E. X., Chen, Y. P., Liu, Y. N., Narasimham, B., Witulski, A. F., Bhuva, B. L., Fleetwood, D. M.
Format: Article
Language:English
Subjects:
Alpha particle
Circuits
combinational logic
Cross-sections
Current measurement
flip-flop
Integrated circuits
Irradiation
Leakage currents
Logic gates
Radiation dosage
Radiation effects
sequential circuit
single event effect
Single Event Effects
Single event upsets
soft error
Soft errors
total-ionizing-dose
Voltage measurement
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Summary:Synergetic effects of total-ionizing-dose irradiation on the single event upset (SEU) and single event transient (SET) performance of 40-nm sequential circuits are studied at doses up to 2 Mrad(SiO 2 ). The impacts of input pattern and supply voltage are evaluated. An initial increase of SEU- and SET-induced soft error cross-section versus total dose is observed, followed by a decreasing trend at higher doses. The maximum increase of SEU- and SET-induced soft error cross-section occurs when the total-ionizing-dose is approximately 1.5 Mrad(SiO 2 ) in the studied sequential circuit. The SET-induced soft error cross-section versus total dose increases at a faster speed than the SEU-induced soft error cross-section.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2016.2614963