Threshold Voltage Model of Total Ionizing Irradiated Short-Channel FD-SOI MOSFETs With Gaussian Doping Profile

This paper investigates the effect of total dose radiation on the electrostatic potential distribution and the related short-channel effects (SCEs) of silicon-on-insulator (SOI) metal-oxide-semiconductor (MOS) devices with a vertical Gaussian doping profile. A new approximation of the 2-D potential...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2018-10, Vol.65 (10), p.2679-2690
Main Authors: Huang, Huixiang, Wei, Sufen, Pan, Jinyan, Xu, Wenbin, Chen, Chi-Cheng, Mei, Qiang, Chen, Jinhai, Geng, Li, Zhang, Zhengxuan, Du, Yong
Format: Article
Language:English
Subjects:
Analytical models
Computer simulation
Doping
Electric potential
Electrostatic properties
Field effect transistors
Fully depleted (FD) silicon-on-insulator (SOI)
Gaussian
Integrated circuit modeling
interface trap
Logic gates
Mathematical model
MOSFET
MOSFETs
Radiation
Radiation dosage
Scaling
Semiconductor devices
short-channel effect (SCE)
SOI (semiconductors)
Threshold voltage
threshold voltage model
total dose radiation
Trapped charge
Voltage
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Summary:This paper investigates the effect of total dose radiation on the electrostatic potential distribution and the related short-channel effects (SCEs) of silicon-on-insulator (SOI) metal-oxide-semiconductor (MOS) devices with a vertical Gaussian doping profile. A new approximation of the 2-D potential function perpendicular to the channel for fully depleted SOI MOS field-effect transistors (FETs) is applied in the analytical threshold voltage model derivation. The impact of interface traps and oxide-trapped charge on the electrostatic potential profile, scaling, and SCEs are verified with TCAD simulations. The model agrees well with the experimental extractions of SCE in n-channel MOSFETs.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2018.2864977