Thermal Runaway in SiC Schottky Barrier Diodes Caused by Heavy Ions

The thermal runaway in SiC Schottky barrier diodes (SBDs) caused by heavy ions was identified by a device simulator with parameters carefully extrapolated to an extended temperature range far exceeding the melting point of SiC. It is shown that the critical electric field needed to activate the impa...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2019-07, Vol.66 (7), p.1688-1693
Main Authors: Kuboyama, Satoshi, Mizuta, Eiichi, Nakada, Yuki, Shindou, Hiroyuki, Michez, Alain, Boch, Jerome, Saigne, Frederic, Touboul, Antoine
Format: Article
Language:English
Subjects:
Biological system modeling
Electric contacts
Electric fields
Heavy ions
Ionization
Ions
Mathematical model
Melting point
Melting points
Parameter identification
Radiation damage
Schottky barriers
Schottky diodes
SiC Schottky barrier diode (SBD)
Silicon carbide
single-event burnout
Temperature distribution
Thermal runaway
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Summary:The thermal runaway in SiC Schottky barrier diodes (SBDs) caused by heavy ions was identified by a device simulator with parameters carefully extrapolated to an extended temperature range far exceeding the melting point of SiC. It is shown that the critical electric field needed to activate the impact ionization attributable to SiC material and the Schottky barrier contact on it are responsible for the thermal runaway in SiC SBDs.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2019.2914494