New SEU Modeling Method for Calibrating Target System to Multiple Radiation Particles

This article proposes a method using electron and proton Single Event Upset sensitivities of a device to deduce all simulation parameters related to an RPP approach. It is shown that for 45-nm double data rate (DDR) memory, the RPP approach is still relevant and the crossing of proton and electron d...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2020-01, Vol.67 (1), p.44-49
Main Authors: Caron, P., Inguimbert, C., Artola, L., Bezerra, F., Ecoffet, R.
Format: Article
Language:English
Subjects:
Computer simulation
Double data rate synchronous dynamic random access memory (DDR SRAM)
electron-induced single event upset (SEU)
Electronics
Engineering Sciences
heavy ion-induced SEU
Heavy ions
Parameter sensitivity
Physics
proton-induced SEU
Protons
Radiation
Random access memory
Sensitivity
SEU
Single event upsets
Space Physics
Surface treatment
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Description
Summary:This article proposes a method using electron and proton Single Event Upset sensitivities of a device to deduce all simulation parameters related to an RPP approach. It is shown that for 45-nm double data rate (DDR) memory, the RPP approach is still relevant and the crossing of proton and electron data makes it possible to constrain and properly define the associated parameters. Heavy ion prediction is also presented.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2019.2953995