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New SEU Modeling Method for Calibrating Target System to Multiple Radiation Particles
This article proposes a method using electron and proton Single Event Upset sensitivities of a device to deduce all simulation parameters related to an RPP approach. It is shown that for 45-nm double data rate (DDR) memory, the RPP approach is still relevant and the crossing of proton and electron d...
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| Published in: | IEEE transactions on nuclear science 2020-01, Vol.67 (1), p.44-49 |
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| Main Authors: | , , , , |
| Format: | Article |
| Language: | English |
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| cited_by | cdi_FETCH-LOGICAL-c367t-8828359657b3ae74ba957ae35f698f5960dca35382bd7275b925516cd4d74a873 |
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| cites | cdi_FETCH-LOGICAL-c367t-8828359657b3ae74ba957ae35f698f5960dca35382bd7275b925516cd4d74a873 |
| container_end_page | 49 |
| container_issue | 1 |
| container_start_page | 44 |
| container_title | IEEE transactions on nuclear science |
| container_volume | 67 |
| creator | Caron, P. Inguimbert, C. Artola, L. Bezerra, F. Ecoffet, R. |
| description | This article proposes a method using electron and proton Single Event Upset sensitivities of a device to deduce all simulation parameters related to an RPP approach. It is shown that for 45-nm double data rate (DDR) memory, the RPP approach is still relevant and the crossing of proton and electron data makes it possible to constrain and properly define the associated parameters. Heavy ion prediction is also presented. |
| doi_str_mv | 10.1109/TNS.2019.2953995 |
| format | article |
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Heavy ion prediction is also presented.</description><identifier>ISSN: 0018-9499</identifier><identifier>EISSN: 1558-1578</identifier><identifier>DOI: 10.1109/TNS.2019.2953995</identifier><identifier>CODEN: IETNAE</identifier><language>eng</language><publisher>New York: IEEE</publisher><subject>Computer simulation ; Double data rate synchronous dynamic random access memory (DDR SRAM) ; electron-induced single event upset (SEU) ; Electronics ; Engineering Sciences ; heavy ion-induced SEU ; Heavy ions ; Parameter sensitivity ; Physics ; proton-induced SEU ; Protons ; Radiation ; Random access memory ; Sensitivity ; SEU ; Single event upsets ; Space Physics ; Surface treatment</subject><ispartof>IEEE transactions on nuclear science, 2020-01, Vol.67 (1), p.44-49</ispartof><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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| identifier | ISSN: 0018-9499 |
| ispartof | IEEE transactions on nuclear science, 2020-01, Vol.67 (1), p.44-49 |
| issn | 0018-9499 1558-1578 |
| language | eng |
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| source | IEEE Electronic Library (IEL) Journals |
| subjects | Computer simulation Double data rate synchronous dynamic random access memory (DDR SRAM) electron-induced single event upset (SEU) Electronics Engineering Sciences heavy ion-induced SEU Heavy ions Parameter sensitivity Physics proton-induced SEU Protons Radiation Random access memory Sensitivity SEU Single event upsets Space Physics Surface treatment |
| title | New SEU Modeling Method for Calibrating Target System to Multiple Radiation Particles |
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