Observation of Radiation-Induced Leakage Current Defects in MOS Oxides With Multifrequency Electrically Detected Magnetic Resonance and Near-Zero-Field Magnetoresistance

We report high and low-frequency electrically detected magnetic resonance measurements and near-zero-field magnetoresistance measurements on radiation-induced leakage currents in irradiated Si/SiO 2 metal-oxide-silicon (MOS) structures. This study identifies the chemical and physical nature of atomi...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2020-01, Vol.67 (1), p.228-233
Main Authors: Moxim, Stephen J., Ashton, James P., Lenahan, Patrick M., Flatte, Michael E., Harmon, Nicholas J., King, Sean W.
Format: Article
Language:English
Subjects:
Current measurement
Defects
Electrically detected magnetic resonance (EDMR)
Frequency measurement
Lead
Leakage
Leakage current
Leakage currents
Magnetic field measurement
Magnetic fields
Magnetic resonance
Magnetoresistance
Magnetoresistivity
Metal oxides
near-zero-field magnetoresistance (NZFMR)
Organic chemistry
Oxides
Radiation
Radiation effects
Radiation leaks
Radiation measurement
Resonance
Silicon
Silicon dioxide
SiO
Surface mount technology
Tunneling
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Summary:We report high and low-frequency electrically detected magnetic resonance measurements and near-zero-field magnetoresistance measurements on radiation-induced leakage currents in irradiated Si/SiO 2 metal-oxide-silicon (MOS) structures. This study identifies the chemical and physical nature of atomic-scale defects involved in radiation-induced leakage currents in SiO 2 using an analytical technique. Our results suggest that trap-assisted tunneling through these Si/SiO 2 structures involves Pb centers (silicon dangling bonds at the Si/SiO 2 interface), rather than only E' centers (oxygen vacancies in the SiO 2 film). We utilize simulations of the defects' resonance spectra to provide further evidence for the involvement of interface Pb centers in the radiation-induced leakage currents. These simulations also explore the possibility of additional E' center involvement in the radiation-induced leakage currents.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2019.2958351