Total-Ionizing-Dose Effects and Low-Frequency Noise in 30-nm Gate-Length Bulk and SOI FinFETs With SiO 2 /HfO 2 Gate Dielectrics

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2020-01, Vol.67 (1), p.245-252
Main Authors: Gorchichko, Mariia, Cao, Yanrong, Zhang, En Xia, Yan, Dawei, Gong, Huiqi, Zhao, Simeng E., Wang, Pan, Jiang, Rong, Liang, Chundong, Fleetwood, Daniel M., Schrimpf, Ronald D., Reed, Robert A., Linten, Dimitri
Format: Article
Language:English
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ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2019.2960815