A Radiation-Hardened CMOS Image Sensor With Pixels Exhibiting a Negligibly Small Dark-Level Increase During Ionizing Radiation

Radiation-hardened image sensors have been developed over the last few decades. Most of these studies have examined sensor properties before and after radiation, but few have described images during radiation. We have developed a new type of radiation-hardened pixel and integrated it into a 1.3-Mpix...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2020-08, Vol.67 (8), p.1835-1845
Main Authors: Watanabe, Takashi, Takeuchi, Tomoaki, Ozawa, Osamu, Komanome, Hirohisa, Akahori, Tomoyuki, Tsuchiya, Kunihiko
Format: Article
Language:English
Subjects:
CMOS
CMOS image sensors (CISs)
color filters (CFs)
Dark current
Digital imaging
Dosage
Electric fields
Gamma rays
Histograms
Ionizing radiation
Logic gates
Photodiodes
photogate (PG)
pinned photodiode (PPD)
Pixels
Radiation effects
radiation hard
Radiation hardening
Sensors
Silicon
total ionizing dose (TID)
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Summary:Radiation-hardened image sensors have been developed over the last few decades. Most of these studies have examined sensor properties before and after radiation, but few have described images during radiation. We have developed a new type of radiation-hardened pixel and integrated it into a 1.3-Mpixel, 18-bit digital CMOS image sensor. The pixel area incorporates several types of variation, and the sensor was analyzed during 60 Co gamma-ray radiation at a rate above 1 kGy/h; the total ionizing dose (TID) was as high as 200 kGy. As a result, one type of pixel showed a negligibly small dark-level increase over the entire period. Conversely, the organic color filters degraded, even at a TID as low as 10 kGy.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2020.3003333