ASET and TID Characterization of a Radiation Hardened Bandgap Voltage Reference in a 28-nm Bulk CMOS Technology

Analog single-event transient (ASET) and total ionizing dose (TID) characterization of a radiation-hardened bandgap voltage reference (BGR) is investigated in a 28-nm commercial bulk CMOS technology. Different radiation hardened by design (RHBD) techniques are used for ASET mitigation in the circuit...

Full description

Saved in:
Bibliographic Details
Published in:IEEE transactions on nuclear science 2022-05, Vol.69 (5), p.1141-1147
Main Authors: Chen, Jianjun, Chi, Yaqing, Liang, Bin, Yuan, Hengzhou, Wen, Yi, Xing, Haiyuan, Yao, Xiaohu
Format: Article
Language:English
Subjects:
28-nm bulk CMOS technology
analog single-event transient (ASET)
bandgap voltage reference (BGR)
Capacitors
Circuit design
CMOS
CMOS technology
Cobalt
Design margins
Energy gap
Energy transfer
Experiments
Gamma rays
Heavy ions
Irradiation
Linear energy transfer (LET)
Metal oxide semiconductors
Mitigation
MOS devices
Radiation
Radiation effects
Radiation hardening
radiation-hardened-by-design (RHBD)
Technology
total ionizing dose (TID)
Transient analysis
Transistors
Voltage
Voltage reduction
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Analog single-event transient (ASET) and total ionizing dose (TID) characterization of a radiation-hardened bandgap voltage reference (BGR) is investigated in a 28-nm commercial bulk CMOS technology. Different radiation hardened by design (RHBD) techniques are used for ASET mitigation in the circuit and layout, and the circuit is optimized to ensure the BGR can still work correctly even using fast nMOS and slow pMOS for TID mitigation. Heavy-ion (linear energy transfer (LET) = 76.3 MeV \cdot cm 2 /mg) experiments show the maximum amplitude of positive (negative) ASET is just 30 mV (90 mV), and Co 60 gamma-ray experiments show the maximum output voltage reduction is just 37 mV after 1.2 Mrad(Si) irradiation, and the final output voltage reduction is just 11 mV after 48 h of annealing. All of the experiments indicate that ASET is significantly mitigated by the RHBD techniques, and the BGR has naturally good TID response due to the design margin. The investigation also indicates that the proposed BGR is a good substitute for space application due to the excellent ASET and TID tolerance capability.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2022.3152496