Investigation and Simulation of SEL Cross Sections at Different Temperatures

The single-event latchup (SEL) cross sections as functions of linear energy transfer (LET) in different CMOS circuits were experimentally investigated at different temperatures. A simplified simulation method for the SEL cross section temperature dependence is proposed and validated.

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2022-07, Vol.69 (7), p.1587-1592
Main Authors: Mrozovskaya, E. V., Chubunov, P. A., Iakovlev, S., Zebrev, G. I.
Format: Article
Language:English
Subjects:
Cross section
Cross-sections
Energy transfer
Ions
Linear energy transfer (LET)
Semiconductor device modeling
Simulation
single-event latchup (SEL)
Temperature dependence
Temperature distribution
Temperature measurement
Temperature sensors
Xenon
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Description
Summary:The single-event latchup (SEL) cross sections as functions of linear energy transfer (LET) in different CMOS circuits were experimentally investigated at different temperatures. A simplified simulation method for the SEL cross section temperature dependence is proposed and validated.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2022.3156601