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High-Power Modular Multilevel Converters With SiC JFETs
This paper studies the possibility of building a modular multilevel converter (M2C) using silicon carbide (SiC) switches. The main focus is on a theoretical investigation of the conduction losses of such a converter and a comparison to a corresponding converter with silicon-insulated gate bipolar tr...
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Published in: | IEEE transactions on power electronics 2012-01, Vol.27 (1), p.28-36 |
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creator | Peftitsis, D. Tolstoy, G. Antonopoulos, A. Rabkowski, J. Jang-Kwon Lim Bakowski, M. Ängquist, Lennart Nee, H. |
description | This paper studies the possibility of building a modular multilevel converter (M2C) using silicon carbide (SiC) switches. The main focus is on a theoretical investigation of the conduction losses of such a converter and a comparison to a corresponding converter with silicon-insulated gate bipolar transistors. Both SiC BJTs and JFETs are considered and compared in order to choose the most suitable technology. One of the submodules of a down-scaled 3 kVA prototype M2C is replaced with a submodule with SiC JFETs without antiparallel diodes. It is shown that the diodeless operation is possible with the JFETs conducting in the negative direction, leaving the possibility to use the body diode during the switching transients. Experimental waveforms for the SiC submodule verify the feasibility during normal steady-state operation. The loss estimation shows that a 300 MW M2C for high-voltage direct current transmission would potentially have an efficiency of approximately 99.8% if equipped with future 3.3 kV 1.2 kA SiC JFETs. |
doi_str_mv | 10.1109/TPEL.2011.2155671 |
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The main focus is on a theoretical investigation of the conduction losses of such a converter and a comparison to a corresponding converter with silicon-insulated gate bipolar transistors. Both SiC BJTs and JFETs are considered and compared in order to choose the most suitable technology. One of the submodules of a down-scaled 3 kVA prototype M2C is replaced with a submodule with SiC JFETs without antiparallel diodes. It is shown that the diodeless operation is possible with the JFETs conducting in the negative direction, leaving the possibility to use the body diode during the switching transients. Experimental waveforms for the SiC submodule verify the feasibility during normal steady-state operation. The loss estimation shows that a 300 MW M2C for high-voltage direct current transmission would potentially have an efficiency of approximately 99.8% if equipped with future 3.3 kV 1.2 kA SiC JFETs.</description><identifier>ISSN: 0885-8993</identifier><identifier>ISSN: 1941-0107</identifier><identifier>EISSN: 1941-0107</identifier><identifier>DOI: 10.1109/TPEL.2011.2155671</identifier><identifier>CODEN: ITPEE8</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Applied sciences ; Capacitors ; Circuit properties ; Converters ; Diodeless operation ; Diodes ; Direct current ; Electric currents ; Electric power ; Electric, optical and optoelectronic circuits ; Electrical engineering. Electrical power engineering ; Electrical equipment ; Electronic circuits ; Electronics ; Exact sciences and technology ; high voltage direct-current transmission ; high voltage directcurrent transmission ; Insulated gate bipolar transistors ; JFET ; JFETs ; Modular ; modular multilevel converter ; Multilevel ; Power electronics, power supplies ; Prototypes ; Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices ; SiC JFETs ; Signal convertors ; Silicon ; Silicon carbide ; Switching ; Switching frequency ; Switching, multiplexing, switched capacity circuits ; Transistors</subject><ispartof>IEEE transactions on power electronics, 2012-01, Vol.27 (1), p.28-36</ispartof><rights>2015 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. 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The main focus is on a theoretical investigation of the conduction losses of such a converter and a comparison to a corresponding converter with silicon-insulated gate bipolar transistors. Both SiC BJTs and JFETs are considered and compared in order to choose the most suitable technology. One of the submodules of a down-scaled 3 kVA prototype M2C is replaced with a submodule with SiC JFETs without antiparallel diodes. It is shown that the diodeless operation is possible with the JFETs conducting in the negative direction, leaving the possibility to use the body diode during the switching transients. Experimental waveforms for the SiC submodule verify the feasibility during normal steady-state operation. The loss estimation shows that a 300 MW M2C for high-voltage direct current transmission would potentially have an efficiency of approximately 99.8% if equipped with future 3.3 kV 1.2 kA SiC JFETs.</description><subject>Applied sciences</subject><subject>Capacitors</subject><subject>Circuit properties</subject><subject>Converters</subject><subject>Diodeless operation</subject><subject>Diodes</subject><subject>Direct current</subject><subject>Electric currents</subject><subject>Electric power</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electrical engineering. Electrical power engineering</subject><subject>Electrical equipment</subject><subject>Electronic circuits</subject><subject>Electronics</subject><subject>Exact sciences and technology</subject><subject>high voltage direct-current transmission</subject><subject>high voltage directcurrent transmission</subject><subject>Insulated gate bipolar transistors</subject><subject>JFET</subject><subject>JFETs</subject><subject>Modular</subject><subject>modular multilevel converter</subject><subject>Multilevel</subject><subject>Power electronics, power supplies</subject><subject>Prototypes</subject><subject>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</subject><subject>SiC JFETs</subject><subject>Signal convertors</subject><subject>Silicon</subject><subject>Silicon carbide</subject><subject>Switching</subject><subject>Switching frequency</subject><subject>Switching, multiplexing, switched capacity circuits</subject><subject>Transistors</subject><issn>0885-8993</issn><issn>1941-0107</issn><issn>1941-0107</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2012</creationdate><recordtype>article</recordtype><recordid>eNqNkd9rE0EQgBdRMLb9A8SXQxAEvXRm9_bXY4nVViIWrPq4bC5zzdZrNt29a_G_d0NCHnzRp4GZb4aZ-Rh7iTBFBHt6fXU-n3JAnHKUUml8wiZoG6wBQT9lEzBG1sZa8Zy9yPkWABsJOGH6Itys6qv4SKn6Epdj70sc-yH09EB9NYvrB0oDpVz9DMOq-hZm1eeP59f5mD3rfJ_pZB-P2PeSnl3U86-fLmdn87qVoIfayIaEsa20iiwa0wqxMEJpLzRQ1-gl-FYuTScaLgUaK3jXKPTSkERhcSGO2Lvd3PxIm3HhNinc-fTbRR_ch_DjzMV041JwggOo_6a5tgoK_f7f9K9h5SRXRhf87Q7fpHg_Uh7cXcgt9b1fUxyzw_Jqo005pKCv_0Jv45jW5VHOIi9alJYFwh3Upphzou6wAILbSnVbqW4r1e2llp43-8E-t77vkl-3IR8auQJU0GwXeLXjAhEdylJr4ALEHzs2pxU</recordid><startdate>201201</startdate><enddate>201201</enddate><creator>Peftitsis, D.</creator><creator>Tolstoy, G.</creator><creator>Antonopoulos, A.</creator><creator>Rabkowski, J.</creator><creator>Jang-Kwon Lim</creator><creator>Bakowski, M.</creator><creator>Ängquist, Lennart</creator><creator>Nee, H.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. 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Electrical power engineering</topic><topic>Electrical equipment</topic><topic>Electronic circuits</topic><topic>Electronics</topic><topic>Exact sciences and technology</topic><topic>high voltage direct-current transmission</topic><topic>high voltage directcurrent transmission</topic><topic>Insulated gate bipolar transistors</topic><topic>JFET</topic><topic>JFETs</topic><topic>Modular</topic><topic>modular multilevel converter</topic><topic>Multilevel</topic><topic>Power electronics, power supplies</topic><topic>Prototypes</topic><topic>Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices</topic><topic>SiC JFETs</topic><topic>Signal convertors</topic><topic>Silicon</topic><topic>Silicon carbide</topic><topic>Switching</topic><topic>Switching frequency</topic><topic>Switching, multiplexing, switched capacity circuits</topic><topic>Transistors</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Peftitsis, D.</creatorcontrib><creatorcontrib>Tolstoy, G.</creatorcontrib><creatorcontrib>Antonopoulos, A.</creatorcontrib><creatorcontrib>Rabkowski, J.</creatorcontrib><creatorcontrib>Jang-Kwon Lim</creatorcontrib><creatorcontrib>Bakowski, M.</creatorcontrib><creatorcontrib>Ängquist, Lennart</creatorcontrib><creatorcontrib>Nee, H.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library Online</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Mechanical & Transportation Engineering Abstracts</collection><collection>Technology Research Database</collection><collection>Engineering Research Database</collection><collection>ProQuest Computer Science Collection</collection><collection>Civil Engineering Abstracts</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>SwePub</collection><collection>SWEPUB Kungliga Tekniska Högskolan full text</collection><collection>SwePub Articles</collection><collection>SWEPUB Freely available online</collection><collection>SWEPUB Kungliga Tekniska Högskolan</collection><collection>SwePub Articles full text</collection><jtitle>IEEE transactions on power electronics</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Peftitsis, D.</au><au>Tolstoy, G.</au><au>Antonopoulos, A.</au><au>Rabkowski, J.</au><au>Jang-Kwon Lim</au><au>Bakowski, M.</au><au>Ängquist, Lennart</au><au>Nee, H.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>High-Power Modular Multilevel Converters With SiC JFETs</atitle><jtitle>IEEE transactions on power electronics</jtitle><stitle>TPEL</stitle><date>2012-01</date><risdate>2012</risdate><volume>27</volume><issue>1</issue><spage>28</spage><epage>36</epage><pages>28-36</pages><issn>0885-8993</issn><issn>1941-0107</issn><eissn>1941-0107</eissn><coden>ITPEE8</coden><abstract>This paper studies the possibility of building a modular multilevel converter (M2C) using silicon carbide (SiC) switches. The main focus is on a theoretical investigation of the conduction losses of such a converter and a comparison to a corresponding converter with silicon-insulated gate bipolar transistors. Both SiC BJTs and JFETs are considered and compared in order to choose the most suitable technology. One of the submodules of a down-scaled 3 kVA prototype M2C is replaced with a submodule with SiC JFETs without antiparallel diodes. It is shown that the diodeless operation is possible with the JFETs conducting in the negative direction, leaving the possibility to use the body diode during the switching transients. Experimental waveforms for the SiC submodule verify the feasibility during normal steady-state operation. The loss estimation shows that a 300 MW M2C for high-voltage direct current transmission would potentially have an efficiency of approximately 99.8% if equipped with future 3.3 kV 1.2 kA SiC JFETs.</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TPEL.2011.2155671</doi><tpages>9</tpages><oa>free_for_read</oa></addata></record> |
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subjects | Applied sciences Capacitors Circuit properties Converters Diodeless operation Diodes Direct current Electric currents Electric power Electric, optical and optoelectronic circuits Electrical engineering. Electrical power engineering Electrical equipment Electronic circuits Electronics Exact sciences and technology high voltage direct-current transmission high voltage directcurrent transmission Insulated gate bipolar transistors JFET JFETs Modular modular multilevel converter Multilevel Power electronics, power supplies Prototypes Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices SiC JFETs Signal convertors Silicon Silicon carbide Switching Switching frequency Switching, multiplexing, switched capacity circuits Transistors |
title | High-Power Modular Multilevel Converters With SiC JFETs |
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