Isolated Ultrafast Gate Driver with Variable Duty Cycle for Pulse and VHF Power Electronics

• Published in: IEEE transactions on power electronics 2020-12, Vol.35 (12), p.12678-12685
• Main Authors: Zan, Xin, Avestruz, Al-Thaddeus
• Format: Article
• Language: English
• Subjects: Current-mode class D (CMCD); double pulse test (DPT); Electric potential; Electronics; GaN; gate driver; Gate drivers; Hardware; Inverters; isolation; LiDAR; Logic gates; Positive feedback; Propagation delay; pulse; Pulse inverters; Radio signals; Resonant frequency; Slew rate; Switching; Threshold voltage; ultrafast; Very high frequencies; very high frequency (VHF); Voltage; Wireless power transmission
• ISSN: 0885-8993; 1941-0107
• DOI: 10.1109/TPEL.2020.2999481

Ultrafast and isolated gate drivers advance the development of pulse and very high frequency power electronics for applications that include LiDAR, space systems, miniaturized hardware, and testing of emerging ultrafast devices. The isolated ultrafast gate driver in this letter achieves a gate voltage slew rate above 12 GV/s with rise and fall times below 260 ps with the proper choice of components. Magnetic isolation provides transient immunity and positive feedback enables dynamic dc restoration to allow arbitrarily long on - and off -times and preserve variable duty cycles. With the isolated ultrafast gate driver, an EPC 2038 GaN FET achieves a drain voltage slew rate of over 37 GV/s when hard-switching and improves total efficiency by 8% (including gating loss) with a careful choice of logic inverters in a symmetric 100 MHz current-mode class D (CMCD) wireless power transfer system. The ultrafast gate driver with isolation and positive feedback was implemented with a commercial radio frequency signal transformer and discrete logic inverters and validated in a hard-switching double pulse test, a narrow pulse test repeating at 165 MHz, and a 100 MHz soft-switching CMCD resonant converter.