A Dynamic Resonant Period Control Technique for Fast and Zero Voltage Switching in GaN-Based Active Clamp Flyback Converters

Compared to Si FETs, when the main GaN FET is in full zero voltage switching condition, maximum switching loss reduction can be achieved. Therefore, in this article, an active clamp flyback converter with GaN devices that implements fast ZVS by using the proposed dynamic resonant period control (DRP...

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Bibliographic Details
Published in:IEEE transactions on power electronics 2021-03, Vol.36 (3), p.3323-3334
Main Authors: Kuo, Chun-Chieh, Lee, Jia-Jyun, He, Yu-Hsien, Wu, Jiang-Yue, Chen, Ke-Horng, Lin, Ying-Hsi, Lin, Shian-Ru, Tsai, Tsung-Yen
Format: Article
Language:English
Subjects:
Active clamp flyback (ACF)
active resonant circuit (ARC)
Circuits
Clamps
Converters
dynamic resonant period control (DRPC) technique
Electric potential
Energy conversion efficiency
Energy dissipation
Energy loss
Gallium nitride
Inductance
Leakage
Loss reduction
RLC circuits
Switches
Switching
Voltage
Zero voltage switching
zero voltage switching (ZVS)
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Summary:Compared to Si FETs, when the main GaN FET is in full zero voltage switching condition, maximum switching loss reduction can be achieved. Therefore, in this article, an active clamp flyback converter with GaN devices that implements fast ZVS by using the proposed dynamic resonant period control (DRPC) technique can reduce large transformer leakage inductance energy loss on the active resonant circuit. As the loading changes, the DRPC technique can dynamically adjust the on -time in auxiliary switch to prevent large voltage stress on the components in the primary side. In full load condition, the leakage energy loss can be reduced, thereby transferring more energy to the secondary side with maximum efficiency up to 94%.
ISSN:0885-8993
1941-0107
DOI:10.1109/TPEL.2020.3016324