Comprehensive Assessment of Avalanche Operating Boundary of SiC Planar/Trench MOSFET in Cryogenic Applications

The avalanche ruggedness of power devices becomes a crucial issue to ensure the safe operation of the power conversion systems, particularly under the extreme temperature conditions. In this article, the avalanche capability of SiC planar/trench MOSFETs is systematically evaluated and analyzed over...

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Bibliographic Details
Published in:IEEE transactions on power electronics 2021-06, Vol.36 (6), p.6954-6966
Main Authors: Qi, Jinwei, Yang, Xu, Li, Xin, Chen, Wenjie, Long, Teng, Tian, Kai, Hou, Xiaodong, Wang, Xuhui
Format: Article
Language:English
Subjects:
1.2 kV SiC planar MOSFET
1.2 kV SiC trench MOSFET
avalanche capability
Avalanches
Converters
Cryogenic properties
Cryogenic temperature
Cryogenics
Electronic devices
Energy conversion
Evaluation
Failure analysis
Flux density
MOSFET
MOSFETs
Ruggedness
Semiconductor device modeling
Silicon carbide
Temperature dependence
Temperature distribution
Unclamped inductive switching (UIS)
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Summary:The avalanche ruggedness of power devices becomes a crucial issue to ensure the safe operation of the power conversion systems, particularly under the extreme temperature conditions. In this article, the avalanche capability of SiC planar/trench MOSFETs is systematically evaluated and analyzed over the temperature range of 90 to 340 K. Importantly, the essential mechanisms and temperature dependence of avalanche failure under cryogenic conditions are further explored by combining many analysis methods such as TCAD simulations, the unclamped inductive switching characterizations, and the transient junction temperature prediction. The highest avalanche energy density of 171.24 mJ/mm 2 at 90K indicates the great application potential of SiC planner mosfet in cryogenic electronics. Moreover, the safe avalanche operation boundary (AOB) model is established over the cryogenic temperature range. The relevant analysis method and AOB model can be used to accurately evaluate and quantitatively predict the avalanche capability of SiC planar/trench mosfet s for the cryogenic converter design.
ISSN:0885-8993
1941-0107
DOI:10.1109/TPEL.2020.3034902