Demonstration of β-Ga 2 O 3 Junction Barrier Schottky Diodes With a Baliga's Figure of Merit of 0.85 GW/cm 2 or a 5A/700 V Handling Capabilities

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Bibliographic Details
Published in:IEEE transactions on power electronics 2021-06, Vol.36 (6), p.6179-6182
Main Authors: Lv, Yuanjie, Wang, Yuangang, Fu, Xingchang, Dun, Shaobo, Sun, Zhaofeng, Liu, Hongyu, Zhou, Xingye, Song, Xubo, Dang, Kui, Liang, Shixiong, Zhang, Jincheng, Zhou, Hong, Feng, Zhihong, Cai, Shujun, Hao, Yue
Format: Article
Language:English
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ISSN:0885-8993
1941-0107
DOI:10.1109/TPEL.2020.3036442