Surge Current Distribution in Paralleled SiC MOSFETs Under Third-Quadrant Operation

Surge current capability of paralleled silicon carbide (SiC) metal-oxide-semiconductor-field-effect transistors ( mosfets) operating in both first and third quadrants is required in various applications. The surge current distribution in paralleled SiC mosfet s during third quadrant operation needs...

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Bibliographic Details
Published in:IEEE transactions on power electronics 2025-02, Vol.40 (2), p.3077-3089
Main Authors: Zhang, Man, Li, Helong, Yang, Zhiqing, Zhao, Shuang, Wang, Xiongfei, Ding, Lijian
Format: Article
Language:English
Subjects:
Current distribution
Immune system
Logic gates
MOSFET
Paralleled silicon carbide (SiC) metal-oxide-semiconductor-field-effect transistors (<sc xmlns:ali="http://www.niso.org/schemas/ali/1.0/" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink" xmlns:xsi="http://www.w3.org/2001/XMLSchema-instance">mosfets)
Semiconductor device modeling
Silicon carbide
surge current
Surges
Temperature
Temperature measurement
third quadrant
Voltage
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Summary:Surge current capability of paralleled silicon carbide (SiC) metal-oxide-semiconductor-field-effect transistors ( mosfets) operating in both first and third quadrants is required in various applications. The surge current distribution in paralleled SiC mosfet s during third quadrant operation needs further investigations. This article, therefore, establishes a source-drain resistance model of SiC mosfet s under different gate bias in surge current range, which reveals the current "competition mechanism" between the MOS-channel path and the body diode path under surge current conditions. It then investigates the influence of device parameters discrepancy on surge current distribution in paralleled SiC mosfet s. It finds out that the discrepancy of body diode parameters has significant influences on surge current distribution under different gate biases, while the parameter discrepancy of MOS-channel has much smaller impact on surge current distribution, even with positive gate bias. The conclusions of this article are supported with simulation and experimental results.
ISSN:0885-8993
1941-0107
DOI:10.1109/TPEL.2024.3485730