Synthesis of Amorphous Silicon Films With High Growth Rate by Gas-Jet Electron Beam Plasma Chemical Vapor Deposition Method

A gas-jet electron beam plasma chemical vapor deposition method for high-rate deposition of thin silicon films is presented. The method is based on the activation of initial gas molecules by electron beam and fast convective transfer of the radicals to a substrate by means of a supersonic free jet.

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Bibliographic Details
Published in:IEEE transactions on plasma science 2014-10, Vol.42 (10), p.2794-2795
Main Authors: Baranov, Evgeniy A., Khmel, Sergey Y., Zamchiy, Alexandr O.
Format: Article
Language:English
Subjects:
Argon
Chemical vapor deposition
Electron beams
Photovoltaic cells
plasma chemistry
plasma materials processing
Plasmas
Silicon
Substrates
thin films
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Description
Summary:A gas-jet electron beam plasma chemical vapor deposition method for high-rate deposition of thin silicon films is presented. The method is based on the activation of initial gas molecules by electron beam and fast convective transfer of the radicals to a substrate by means of a supersonic free jet.
ISSN:0093-3813
1939-9375
DOI:10.1109/TPS.2014.2352392