Synthesis of Amorphous Silicon Films With High Growth Rate by Gas-Jet Electron Beam Plasma Chemical Vapor Deposition Method

A gas-jet electron beam plasma chemical vapor deposition method for high-rate deposition of thin silicon films is presented. The method is based on the activation of initial gas molecules by electron beam and fast convective transfer of the radicals to a substrate by means of a supersonic free jet.

Saved in:
Bibliographic Details
Published in:IEEE transactions on plasma science 2014-10, Vol.42 (10), p.2794-2795
Main Authors: Baranov, Evgeniy A., Khmel, Sergey Y., Zamchiy, Alexandr O.
Format: Article
Language:English
Subjects:
Argon
Chemical vapor deposition
Electron beams
Photovoltaic cells
plasma chemistry
plasma materials processing
Plasmas
Silicon
Substrates
thin films
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
cited_by cdi_FETCH-LOGICAL-c333t-b3b83c91860a20d15b68d97e071a15dd99c27ddeb1dc3c31d2a183128891b4513
cites cdi_FETCH-LOGICAL-c333t-b3b83c91860a20d15b68d97e071a15dd99c27ddeb1dc3c31d2a183128891b4513
container_end_page 2795
container_issue 10
container_start_page 2794
container_title IEEE transactions on plasma science
container_volume 42
creator Baranov, Evgeniy A.
Khmel, Sergey Y.
Zamchiy, Alexandr O.
description A gas-jet electron beam plasma chemical vapor deposition method for high-rate deposition of thin silicon films is presented. The method is based on the activation of initial gas molecules by electron beam and fast convective transfer of the radicals to a substrate by means of a supersonic free jet.
doi_str_mv 10.1109/TPS.2014.2352392
format article
fullrecord <record><control><sourceid>crossref_ieee_</sourceid><recordid>TN_cdi_crossref_primary_10_1109_TPS_2014_2352392</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>6894566</ieee_id><sourcerecordid>10_1109_TPS_2014_2352392</sourcerecordid><originalsourceid>FETCH-LOGICAL-c333t-b3b83c91860a20d15b68d97e071a15dd99c27ddeb1dc3c31d2a183128891b4513</originalsourceid><addsrcrecordid>eNo9kM1OAjEYRRujiYjuTdz0BQb79WN-ukTkR4ORCOpy0mmLUzNDSVtjiC_vEIyrexfn3sUh5BrYAICJ2_VyNeAMhgOOKUfBT0gPBIpEYJ6ekh5jAhMsAM_JRQifrCNTxnvkZ7XfxtoEG6jb0FHr_K52X4GubGOV29KpbdpA322s6dx-1HTm3XfXX2Q0tNrTmQzJo4l00hgVfcffGdnSZSNDK-m4Nq1VsqFvcuc8vTc7F2y0HfVkYu30JTnbyCaYq7_sk9fpZD2eJ4vn2cN4tEgUIsakwqpAJaDImORMQ1plhRa5YTlISLUWQvFca1OBVqgQNJdQIPCiEFANU8A-Ycdf5V0I3mzKnbet9PsSWHmQV3byyoO88k9eN7k5Tqwx5h_PCjFMswx_AQrFa4I</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype></control><display><type>article</type><title>Synthesis of Amorphous Silicon Films With High Growth Rate by Gas-Jet Electron Beam Plasma Chemical Vapor Deposition Method</title><source>IEEE Xplore (Online service)</source><creator>Baranov, Evgeniy A. ; Khmel, Sergey Y. ; Zamchiy, Alexandr O.</creator><creatorcontrib>Baranov, Evgeniy A. ; Khmel, Sergey Y. ; Zamchiy, Alexandr O.</creatorcontrib><description>A gas-jet electron beam plasma chemical vapor deposition method for high-rate deposition of thin silicon films is presented. The method is based on the activation of initial gas molecules by electron beam and fast convective transfer of the radicals to a substrate by means of a supersonic free jet.</description><identifier>ISSN: 0093-3813</identifier><identifier>EISSN: 1939-9375</identifier><identifier>DOI: 10.1109/TPS.2014.2352392</identifier><identifier>CODEN: ITPSBD</identifier><language>eng</language><publisher>IEEE</publisher><subject>Argon ; Chemical vapor deposition ; Electron beams ; Photovoltaic cells ; plasma chemistry ; plasma materials processing ; Plasmas ; Silicon ; Substrates ; thin films</subject><ispartof>IEEE transactions on plasma science, 2014-10, Vol.42 (10), p.2794-2795</ispartof><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c333t-b3b83c91860a20d15b68d97e071a15dd99c27ddeb1dc3c31d2a183128891b4513</citedby><cites>FETCH-LOGICAL-c333t-b3b83c91860a20d15b68d97e071a15dd99c27ddeb1dc3c31d2a183128891b4513</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/6894566$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,27924,27925,54796</link.rule.ids></links><search><creatorcontrib>Baranov, Evgeniy A.</creatorcontrib><creatorcontrib>Khmel, Sergey Y.</creatorcontrib><creatorcontrib>Zamchiy, Alexandr O.</creatorcontrib><title>Synthesis of Amorphous Silicon Films With High Growth Rate by Gas-Jet Electron Beam Plasma Chemical Vapor Deposition Method</title><title>IEEE transactions on plasma science</title><addtitle>TPS</addtitle><description>A gas-jet electron beam plasma chemical vapor deposition method for high-rate deposition of thin silicon films is presented. The method is based on the activation of initial gas molecules by electron beam and fast convective transfer of the radicals to a substrate by means of a supersonic free jet.</description><subject>Argon</subject><subject>Chemical vapor deposition</subject><subject>Electron beams</subject><subject>Photovoltaic cells</subject><subject>plasma chemistry</subject><subject>plasma materials processing</subject><subject>Plasmas</subject><subject>Silicon</subject><subject>Substrates</subject><subject>thin films</subject><issn>0093-3813</issn><issn>1939-9375</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2014</creationdate><recordtype>article</recordtype><recordid>eNo9kM1OAjEYRRujiYjuTdz0BQb79WN-ukTkR4ORCOpy0mmLUzNDSVtjiC_vEIyrexfn3sUh5BrYAICJ2_VyNeAMhgOOKUfBT0gPBIpEYJ6ekh5jAhMsAM_JRQifrCNTxnvkZ7XfxtoEG6jb0FHr_K52X4GubGOV29KpbdpA322s6dx-1HTm3XfXX2Q0tNrTmQzJo4l00hgVfcffGdnSZSNDK-m4Nq1VsqFvcuc8vTc7F2y0HfVkYu30JTnbyCaYq7_sk9fpZD2eJ4vn2cN4tEgUIsakwqpAJaDImORMQ1plhRa5YTlISLUWQvFca1OBVqgQNJdQIPCiEFANU8A-Ycdf5V0I3mzKnbet9PsSWHmQV3byyoO88k9eN7k5Tqwx5h_PCjFMswx_AQrFa4I</recordid><startdate>20141001</startdate><enddate>20141001</enddate><creator>Baranov, Evgeniy A.</creator><creator>Khmel, Sergey Y.</creator><creator>Zamchiy, Alexandr O.</creator><general>IEEE</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>AAYXX</scope><scope>CITATION</scope></search><sort><creationdate>20141001</creationdate><title>Synthesis of Amorphous Silicon Films With High Growth Rate by Gas-Jet Electron Beam Plasma Chemical Vapor Deposition Method</title><author>Baranov, Evgeniy A. ; Khmel, Sergey Y. ; Zamchiy, Alexandr O.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c333t-b3b83c91860a20d15b68d97e071a15dd99c27ddeb1dc3c31d2a183128891b4513</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2014</creationdate><topic>Argon</topic><topic>Chemical vapor deposition</topic><topic>Electron beams</topic><topic>Photovoltaic cells</topic><topic>plasma chemistry</topic><topic>plasma materials processing</topic><topic>Plasmas</topic><topic>Silicon</topic><topic>Substrates</topic><topic>thin films</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Baranov, Evgeniy A.</creatorcontrib><creatorcontrib>Khmel, Sergey Y.</creatorcontrib><creatorcontrib>Zamchiy, Alexandr O.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Xplore</collection><collection>CrossRef</collection><jtitle>IEEE transactions on plasma science</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext</fulltext></delivery><addata><au>Baranov, Evgeniy A.</au><au>Khmel, Sergey Y.</au><au>Zamchiy, Alexandr O.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>Synthesis of Amorphous Silicon Films With High Growth Rate by Gas-Jet Electron Beam Plasma Chemical Vapor Deposition Method</atitle><jtitle>IEEE transactions on plasma science</jtitle><stitle>TPS</stitle><date>2014-10-01</date><risdate>2014</risdate><volume>42</volume><issue>10</issue><spage>2794</spage><epage>2795</epage><pages>2794-2795</pages><issn>0093-3813</issn><eissn>1939-9375</eissn><coden>ITPSBD</coden><abstract>A gas-jet electron beam plasma chemical vapor deposition method for high-rate deposition of thin silicon films is presented. The method is based on the activation of initial gas molecules by electron beam and fast convective transfer of the radicals to a substrate by means of a supersonic free jet.</abstract><pub>IEEE</pub><doi>10.1109/TPS.2014.2352392</doi><tpages>2</tpages></addata></record>
fulltext fulltext
identifier ISSN: 0093-3813
ispartof IEEE transactions on plasma science, 2014-10, Vol.42 (10), p.2794-2795
issn 0093-3813
1939-9375
language eng
recordid cdi_crossref_primary_10_1109_TPS_2014_2352392
source IEEE Xplore (Online service)
subjects Argon
Chemical vapor deposition
Electron beams
Photovoltaic cells
plasma chemistry
plasma materials processing
Plasmas
Silicon
Substrates
thin films
title Synthesis of Amorphous Silicon Films With High Growth Rate by Gas-Jet Electron Beam Plasma Chemical Vapor Deposition Method
url http://sfxeu10.hosted.exlibrisgroup.com/loughborough?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-29T19%3A08%3A44IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-crossref_ieee_&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=Synthesis%20of%20Amorphous%20Silicon%20Films%20With%20High%20Growth%20Rate%20by%20Gas-Jet%20Electron%20Beam%20Plasma%20Chemical%20Vapor%20Deposition%20Method&rft.jtitle=IEEE%20transactions%20on%20plasma%20science&rft.au=Baranov,%20Evgeniy%20A.&rft.date=2014-10-01&rft.volume=42&rft.issue=10&rft.spage=2794&rft.epage=2795&rft.pages=2794-2795&rft.issn=0093-3813&rft.eissn=1939-9375&rft.coden=ITPSBD&rft_id=info:doi/10.1109/TPS.2014.2352392&rft_dat=%3Ccrossref_ieee_%3E10_1109_TPS_2014_2352392%3C/crossref_ieee_%3E%3Cgrp_id%3Ecdi_FETCH-LOGICAL-c333t-b3b83c91860a20d15b68d97e071a15dd99c27ddeb1dc3c31d2a183128891b4513%3C/grp_id%3E%3Coa%3E%3C/oa%3E%3Curl%3E%3C/url%3E&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=6894566&rfr_iscdi=true