Novel RF process monitoring test structure for silicon devices

This paper demonstrates a novel RFCMOS process monitoring test structure. Outstanding agreement in dc and radio frequency (RF) characteristics has been observed between conventional test structure and the new process monitoring test structure for MOSFET with good correlations in measured capacitance...

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Bibliographic Details
Published in:IEEE transactions on semiconductor manufacturing 2005-05, Vol.18 (2), p.246-254
Main Authors: Choon Beng Sia, Beng Hwee Ong, Kok Meng Lim, Kiat Seng Yeo, Manh Anh Do, Jian-Guo Ma, Alam, T.
Format: Article
Language:English
Subjects:
Applied sciences
Benchmarking
Capacitors
Circuit synthesis
Circuit testing
Dielectric, amorphous and glass solid devices
Diodes
Direct current
Electronics
Exact sciences and technology
Foundries
Integrated circuit modeling
Metal oxide semiconductors
MIM capacitor
MIM capacitors
Monitoring
MOS varactor and interconnect
MOSFET circuits
MOSFETs
process monitoring
Radio frequencies
Radio frequency
RFCMOS
scribe line
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductors
Silicon devices
Testing, measurement, noise and reliability
Transistors
Varactors
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Summary:This paper demonstrates a novel RFCMOS process monitoring test structure. Outstanding agreement in dc and radio frequency (RF) characteristics has been observed between conventional test structure and the new process monitoring test structure for MOSFET with good correlations in measured capacitances also noted for metal-insulator-metal capacitor and MOS varactor. Possible process monitoring test structure is also suggested as a reference benchmarking indicator for interconnects.
ISSN:0894-6507
1558-2345
DOI:10.1109/TSM.2005.845095