Oxide HDP-CVD Modeling for Shallow Trench Isolation

A method is proposed to model the high-density plasma chemical vapor deposition step within the shallow trench isolation module in the CMOS technology. To model a process is the first step in the design of a run-to-run system in order to reduce the lot-to-lot variability (a lot equals 25 wafers). A...

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Bibliographic Details
Published in:IEEE transactions on semiconductor manufacturing 2010-08, Vol.23 (3), p.400-410
Main Authors: Roussy, A, Delachet, L, Belharet, D, Pinaton, J, Collot, P
Format: Article
Language:English
Subjects:
Applied sciences
Chemical vapor deposition
CMOS
CMOS technology
Design engineering
Design of experiment (DOE)
Design of experiments
Design. Technologies. Operation analysis. Testing
Electronics
Engineering Sciences
Exact sciences and technology
high-density plasma chemical vapor deposition (HDP-CVD) process
Integrated circuits
Isolation technology
Mathematical models
Metrology
Microelectronic fabrication (materials and surfaces technology)
Other
Oxides
Plasma applications
Plasma chemistry
Plasma materials processing
Process control
run-to-run (R2R) control
Semiconductor device manufacture
Semiconductor device modeling
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Semiconductors
Trenches
Variability
Citations: Items that this one cites
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Description
Summary:A method is proposed to model the high-density plasma chemical vapor deposition step within the shallow trench isolation module in the CMOS technology. To model a process is the first step in the design of a run-to-run system in order to reduce the lot-to-lot variability (a lot equals 25 wafers). A model is developed to control the MeanThickness and the Range of the MeanThickness (uniformity). A satisfactory model was obtained through a design of experiments.
ISSN:0894-6507
1558-2345
DOI:10.1109/TSM.2010.2051749