Effect of SiO 2 Interfacial Layer Reduction on MFSFET With 5 nm-Thick Ferroelectric Nondoped HfO 2 by Deposition Rate Control

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Bibliographic Details
Published in:IEEE transactions on semiconductor manufacturing 2023-11, Vol.36 (4), p.553-557
Main Authors: Ohmi, Shun-ichiro, Tanuma, Masakazu, Shin, Joong-Won
Format: Article
Language:English
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ISSN:0894-6507
1558-2345
DOI:10.1109/TSM.2023.3284829