850 GHz Receiver and Transmitter Front-Ends Using InP HEMT

This paper reports on development of 850 GHz band receiver and transmitter front-ends using a new generation of 25 nm indium phosphide high electron mobility transistor engineered for high maximum frequency of oscillation f MAX and cut-off frequency fT. Integrated circuits in this technology are use...

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Bibliographic Details
Published in:IEEE transactions on terahertz science and technology 2017-07, Vol.7 (4), p.466-475
Main Authors: Leong, Kevin M. K. H., Xiaobing Mei, Yoshida, Wayne H., Zamora, Alexis, Padilla, Jose G., Gorospe, Ben S., Khanh Nguyen, Deal, William R.
Format: Article
Language:English
Subjects:
Amplification
Circuit design
Cut-off
Electromagnetic waveguides
Electron mobility
HEMT
HEMTs
III-V semiconductor materials
Indium phosphide
Indium phosphides
Integrated circuits
Logic gates
Low noise
Packaging design
Receivers
terahertz
terahertz monolithic integrated circuit
terahertz transistor
Transmitters
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Summary:This paper reports on development of 850 GHz band receiver and transmitter front-ends using a new generation of 25 nm indium phosphide high electron mobility transistor engineered for high maximum frequency of oscillation f MAX and cut-off frequency fT. Integrated circuits in this technology are used for all receiver and transmitter functions, including low noise amplification and power amplification directly at 850 GHz, as well as frequency conversion. This paper provides a detailed summary of process capability, integrated circuit design and packaging, and an overview of the receiver and transmitter front-ends.
ISSN:2156-342X
2156-3446
DOI:10.1109/TTHZ.2017.2710632