A Voltage-Time Model for Memristive Devices

A novel electrical model that describes the time evolution of oxide memristive devices is proposed. Starting from some considerations about the physical characteristics of the resistance change in the active layer of these devices, the traditional model based on a resistor series has been improved a...

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Bibliographic Details
Published in:IEEE transactions on very large scale integration (VLSI) systems 2018-08, Vol.26 (8), p.1452-1460
Main Authors: Lupo, Nicola, Bonizzoni, Edoardo, Perez, Eduardo, Wenger, Christian, Maloberti, Franco
Format: Article
Language:English
Subjects:
Anodes
Computational modeling
Computer simulation
Devices
Electrical model
Hafnium oxide
Ions
memristor
Memristors
Nonvolatile memory
oxide memories
Physical properties
Resistance
resistive memories
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Summary:A novel electrical model that describes the time evolution of oxide memristive devices is proposed. Starting from some considerations about the physical characteristics of the resistance change in the active layer of these devices, the traditional model based on a resistor series has been improved and extended, solving some limitations pending in the classical interpretation. The low complexity of the proposed model is very profitable for the resistive memory designers as it is easy to be integrated in the traditional design flows. Experimental results for HfO 2 devices implemented in a 250-nm BiCMOS process show an excellent match with the simulations achieved by using the proposed model and validate its effectiveness.
ISSN:1063-8210
1557-9999
DOI:10.1109/TVLSI.2018.2823586