The P-channel refractory metal self-registered MOSFET

• Published in: IEEE transactions on electron devices 1971-10, Vol.18 (10), p.931-940
• Main Authors: Brown, D.M., Cady, W.R., Sprague, J.W., Salvagni, P.J.
• Format: Article
• Language: English
• ISSN: 0018-9383; 1557-9646
• DOI: 10.1109/T-ED.1971.17307

In this paper p-channel self-registered Mo gate MOSFET fabrication techniques are described and tested. Excellent p-channel devices resulted. Device characteristics including junction characteristics, threshold, stability, effective channel mobilities, and Si-SiO 2 interface studies are examined and compared with theoretical predictions. Simple processing steps yielded FETs whose threshold is predictably controlled by the intrinsic properties of Mo and the Si-SiO 2 system. Effective mobility theory matches the data at low fields, but at high fields theory predicts values that are too low. Similarly constructed integrated circuits are T 2 L compatible with excellent threshold reproducibility and exhibit stability during accelerated temperature-bias life testing.