GaAs vapor-grown Shockley diodes and semiconductor-controlled rectifiers

GaAs vapor-grown n-p-n-p structures have been prepared from which two-terminal negative-resistance Shockley diodes and three-terminal semiconductor controlled rectifiers (SCR's) have been fabricated. For basewidths between 1 and 5 µm, these devices have a breakover voltage between 5 and 20 V, a...

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Published in:IEEE transactions on electron devices 1972-05, Vol.19 (5), p.691-692
Main Authors: Wronski, C.R., Nuese, C.J., Gossenberger, H.F.
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Language:English
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Nuese, C.J.
Gossenberger, H.F.
description GaAs vapor-grown n-p-n-p structures have been prepared from which two-terminal negative-resistance Shockley diodes and three-terminal semiconductor controlled rectifiers (SCR's) have been fabricated. For basewidths between 1 and 5 µm, these devices have a breakover voltage between 5 and 20 V, a forward voltage of about 1.2 V, and switching times on the order of 1 to 10 ns. Uniform near-bandgap electroluminescence with external quantum efficiencies up to about 0.2 percent is obtained at room temperature. The SCR's fabricated from the vapor-grown structures exhibit classical latching behavior upon application of a gating pulse to either of the interior layers.
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title GaAs vapor-grown Shockley diodes and semiconductor-controlled rectifiers
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