Low-pressure chemical vapor deposition for very large-scale integration processing-A review

An overview is presented of low-pressure chemical vapor deposition and its applicability to VLSI processing for depositing thin films of insulators, semiconductors, and metals. The major contributions of low-pressure chemical vapor deposition to VLSI technology are its capability for economically pr...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1979-04, Vol.26 (4), p.647-657
Main Authors: Kern, W., Schnable, G.L.
Format: Article
Language:English
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Summary:An overview is presented of low-pressure chemical vapor deposition and its applicability to VLSI processing for depositing thin films of insulators, semiconductors, and metals. The major contributions of low-pressure chemical vapor deposition to VLSI technology are its capability for economically producing films with superior uniformity, high purity, and excellent step coverage-factors essential for achieving the very high device reliability and high product yield required in the manufacturing of VLSI devices. Specific examples from the recent literature are reviewed to exemplify how the technique has been utilized to date in solid-state device technology. Applications of films produced by low-pressure reactive plasma chemical vapor deposition are also included.
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1979.19473