The use of GaAs-(Ga, Al)As heterostructures for FET devices

The metalorganic VPE process has been applied to the growth of GaAs-GaAlAs heterostructures suitable for FET devices. Two kinds of materials are examined; namely, insulating GaAlAs hetero-buffer and heterojunction p-GaAlAs-n-GaAs, The technology of device processing uses selective etching and self-a...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1980-06, Vol.27 (6), p.1141-1147
Main Authors: Boccon-Gibod, D., Andre, J.-P., Baudet, P., Hallais, J.-P.
Format: Article
Language:English
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Summary:The metalorganic VPE process has been applied to the growth of GaAs-GaAlAs heterostructures suitable for FET devices. Two kinds of materials are examined; namely, insulating GaAlAs hetero-buffer and heterojunction p-GaAlAs-n-GaAs, The technology of device processing uses selective etching and self-alignment techniques. The heterobuffered FET's demonstrate effective electron confinement and the heterojunction HJFET's exhibit a built-in voltage of 1.4 eV. However, more has to be known on the transition at the heterointerface to improve the device performances.
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1980.19997