WA-B1 direct ion implantation studies of large-diameter undoped GaAs prepared by LEC growth for monolithic X-band power FET circuits

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Bibliographic Details
Published in:IEEE transactions on electron devices 1980-11, Vol.27 (11), p.2195-2195
Main Authors: Eldridge, G.W., Hobgood, H.M., Barrett, D.L., Braggins, T.T., Thomas, R.N.
Format: Article
Language:English
Subjects:
Gallium arsenide
Integrated circuit modeling
Logic gates
MOSFET
Silicon
Silicon compounds
Substrates
Online Access:Get full text
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ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1980.20227