Monolithic microwave amplifiers formed by ion implantation into LEC gallium arsenide substrates

A fabrication procedure for broad-band monolithic power GaAs integrated circuits has been demonstrated which includes formation of via holes through the 100-µm-thick GaAs substrate. A selective implant of 29 Si ions into the GaAs substrate is used to dope the FET channel region to 1.2 × 10 17 cm -3...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1981-02, Vol.28 (2), p.191-196
Main Authors: Driver, M.C., Shing-Kuo Wang, Przybysz, J.X., Wrick, V.L., Wickstrom, R.A., Coleman, E.S., Oakes, J.G.
Format: Article
Language:English
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Summary:A fabrication procedure for broad-band monolithic power GaAs integrated circuits has been demonstrated which includes formation of via holes through the 100-µm-thick GaAs substrate. A selective implant of 29 Si ions into the GaAs substrate is used to dope the FET channel region to 1.2 × 10 17 cm -3 . The ohmic contacts are AuGe/Ni/Pt and the gates are Ti/Pt/Au. A 1.5-µm-thick circuit pattern is achieved using metal rejection assited by chlorobenzene treatment of AZ1350J photoresist. Using undoped Czochralski wafers of GaAs pulled from a pyrolytic boron nitride crucible, integrated amplifiers have been produced which deliver 28 ± 0.7 dBm from 5.7 to 11 GHz. These chips are 2 mm × 4.75 mm × 0.1 mm thick.
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1981.20309