IIIA-8 measurements of the conduction band discontinuity of MBE-grown In 0.52 Al 0.48 As/In 0.53 Ga 0.47 As, N-n heterojunction by C-V profiling

Saved in:
Bibliographic Details
Published in:IEEE transactions on electron devices 1983-11, Vol.30 (11), p.1579-1579
Main Authors: People, R., Wecht, K.W., Alavi, K., Cho, A.Y.
Format: Article
Language:English
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:
ISSN:0018-9383
DOI:10.1109/T-ED.1983.21363