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IIA-4 A self-aligned gate process for IC's based on modulation-doped (Al, Ga)As/GaAs FET's
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Published in: | IEEE transactions on electron devices 1984-12, Vol.31 (12), p.1963-1963 |
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Main Authors: | , , |
Format: | Article |
Language: | English |
Citations: | Items that cite this one |
Online Access: | Get full text |
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ISSN: | 0018-9383 1557-9646 |
DOI: | 10.1109/T-ED.1984.21829 |