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IIA-4 A self-aligned gate process for IC's based on modulation-doped (Al, Ga)As/GaAs FET's

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Bibliographic Details
Published in:IEEE transactions on electron devices 1984-12, Vol.31 (12), p.1963-1963
Main Authors: Cirillo, N.C., Abrokwah, J.K., Shur, M.S.
Format: Article
Language:English
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ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1984.21829