IIB-6 recent advances in the rapid thermal annealing of boron and BF 2 + implanted source-drain junctions for submicrometer CMOS technology

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Bibliographic Details
Published in:IEEE transactions on electron devices 1984-12, Vol.31 (12), p.1966-1966
Main Authors: Vasudev, P.K., Schmitz, A., Olson, G.L.
Format: Article
Language:English
Online Access:Get full text
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ISSN:0018-9383
DOI:10.1109/T-ED.1984.21839