Analytical expression for the potential of guard rings of diodes operating in the punchthrough mode

An analytical modeling is given to prove that the potential of the floating guard ring varies linearly versus the reverse applied bias in planar punch through diodes with one ring. The result is valid for multiple guard-ring structures. From this modeling and using the criterion of simultaneous brea...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1985-04, Vol.32 (4), p.838-840
Main Authors: Boisson, V., Le Helley, M., Chante, J.P.
Format: Article
Language:English
Subjects:
Applied sciences
Diodes
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:An analytical modeling is given to prove that the potential of the floating guard ring varies linearly versus the reverse applied bias in planar punch through diodes with one ring. The result is valid for multiple guard-ring structures. From this modeling and using the criterion of simultaneous breakdown on the main junction and on the rings for a given structure, an approximate and quick determination of the optimized ring spacings is obtained.
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1985.22029