Two-dimensional numerical modeling of magnetic-field sensors in CMOS technology

We present two-dimensional numerical simulations of two types of integrated silicon magnetic-field sensors realized recently in standard CMOS technology, viz. the split-drain MOSFET and the vertical Hall-effect device sensitive to magnetic fields perpendicular and parallel to the chip surface, respe...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1985-07, Vol.32 (7), p.1212-1219
Main Authors: Nathan, A., Huiser, A.M.J., Baltes, H.P.
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Magnetoelectric, magnetostrictive, magnetoacoustic, magnetooptic and magnetothermal devices. Spintronics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:We present two-dimensional numerical simulations of two types of integrated silicon magnetic-field sensors realized recently in standard CMOS technology, viz. the split-drain MOSFET and the vertical Hall-effect device sensitive to magnetic fields perpendicular and parallel to the chip surface, respectively. Our results include potential, current, and surface charge distributions as well as sensitivity, linearity, and noise. Improved device geometries are suggested. Both the finite-difference method and a novel Greens function approach are used for solving the differential equations governing the carrier transport in the presence of a magnetic field.
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1985.22103