Numerical modeling of magnetic-field-sensitive semiconductor devices

Semiconductor devices in the presence of a magnetic field have been modeled numerically. The two-dimensional distributions of the electric potential, the electron concentration, and the hole concentration in a silicon slab exposed to a magnetic field have been computed. We have generalized the well-...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1985-07, Vol.32 (7), p.1224-1230
Main Authors: Andor, L., Baltes, H.P., Nathan, A., Schmidt-Weinmar, H.G.
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Magnetoelectric, magnetostrictive, magnetoacoustic, magnetooptic and magnetothermal devices. Spintronics
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
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Summary:Semiconductor devices in the presence of a magnetic field have been modeled numerically. The two-dimensional distributions of the electric potential, the electron concentration, and the hole concentration in a silicon slab exposed to a magnetic field have been computed. We have generalized the well-known Scharfetter-Gummel scheme to the case of two dimensions and nonzero magnetic field and employed a finite-difference technique. Our results are in support of earlier results in case of Hall plates. In intrinsic or closely intrinsic silicon, our results show both magnetoconcentration and space-charge effects. As a realistic example of a magnetic-field sensor, we have modeled a p + -i-n + silicon diode with split contacts.
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1985.22105