Channel-implant dose dependence of hot-carrier generation and injection in submicrometer buried-channel PMOSFET's

Hot-carrier generation and gate injection in submicrometer buried-channel PMOSFET's occur rather intensely because of their high doses for deep-channel ion implantation intended for drain punchthrough prevention. The generation and injection have a much stronger dependence on deep implantation...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1985-01, Vol.32 (9), p.1685-1687
Main Authors: Kawabuchi, K., Yoshimi, M., Wada, T., Takahashi, M., Numata, K.
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Description
Summary:Hot-carrier generation and gate injection in submicrometer buried-channel PMOSFET's occur rather intensely because of their high doses for deep-channel ion implantation intended for drain punchthrough prevention. The generation and injection have a much stronger dependence on deep implantation than on shallow implantation, in accordance with measurement and simulation. Channel current distribution along depth (especially its peak position) in a drain depletion region is shown to be a particularly important factor in analyzing the implant dose dependence.
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1985.22180