Observation of hot-hole injection in NMOS transistors using a modified floating-gate technique

A modified floating-gate technique for measuring small gate currents in MOSFET's with very high resolution (0.01 fA) is described. Using this technique, gate oxide currents due to hot-carrier injection are measured in n-channel MOSFET's. The conventional negative channel hot-electron gate...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1986-10, Vol.33 (10), p.1529-1534
Main Authors: Saks, N.S., Heremans, P.L., van den Hove, L., Maes, H.E., De Keersmaecker, R.F., Declerck, G.J.
Format: Article
Language:English
Subjects:
Applied sciences
Electronics
Exact sciences and technology
Other techniques and industries
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transistors
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Description
Summary:A modified floating-gate technique for measuring small gate currents in MOSFET's with very high resolution (0.01 fA) is described. Using this technique, gate oxide currents due to hot-carrier injection are measured in n-channel MOSFET's. The conventional negative channel hot-electron gate oxide current is observed near V_{g} = V_{d} and a small positive gate current occurs at low V g . We argue that the dependencies of this small positive current on V g and gate length, together with results from a separate floating-source experiment, are consistent only with hot-hole injection.
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1986.22703