IVA-5 ion implanted GaAs p-channel MESFET with Schottky-barrier height enhancement

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Bibliographic Details
Published in:IEEE transactions on electron devices 1986-11, Vol.33 (11), p.1851-1851
Main Authors: Lee, G.Y., Baier, S.M., Chung, H.K., Fure, B.J., Cirillo, N.C.
Format: Article
Language:English
Online Access:Get full text
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ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1986.22793