Current-voltage and capacitance-voltage characteristics of heterostructure insulated-gate field-effect transistors

We present the results of theoretical and experimental studies of heterostructure insulated-gate field-effect transistors (HIG' FET's). We develop an improved charge-control model for the two-dimensional densities of electronand hole gases at the heterointerface. Our model provides an accu...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1987-08, Vol.34 (8), p.1650-1657
Main Authors: Baek, J., Shur, M.S., Daniels, R.R., Arch, D.K., Abrokwah, J.K., Tufte, O.N.
Format: Article
Language:English
Subjects:
Applied sciences
Exact sciences and technology
Other techniques and industries
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Summary:We present the results of theoretical and experimental studies of heterostructure insulated-gate field-effect transistors (HIG' FET's). We develop an improved charge-control model for the two-dimensional densities of electronand hole gases at the heterointerface. Our model provides an accurate description of the device behavior even at relatively low densities of two-dimensional gases. We obtain the current-voltage characteristics of HIGFET's using our charge-control model and account for the gate current. The theoretical calculations are in good agreement with the experimental measurements.
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1987.23133