GaAs MESFET simulation using PISCES with field-dependent mobility-diffusivity relation

Most conventional semiconductor device simulators, such as PISCES and BAMBI, use a constant diffusivity-to-mobility ratio modeling (linear relation). We modify PISCES to perform field-dependent diffusivity-to-mobility ratio (nonlinear relation) GaAs MESFET simulation and compare it to the constant r...

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Bibliographic Details
Published in:IEEE transactions on electron devices 1987-10, Vol.34 (10), p.2034-2039
Main Authors: McColl, R.W., Carter, R.L., Owens, J.M., Tsay-Jiu Shieh
Format: Article
Language:English
Subjects:
Applied sciences
Electric fields
Electronics
Exact sciences and technology
Gallium arsenide
Impurities
Logic gates
Mathematical model
MESFETs
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Transconductance
Transistors
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Summary:Most conventional semiconductor device simulators, such as PISCES and BAMBI, use a constant diffusivity-to-mobility ratio modeling (linear relation). We modify PISCES to perform field-dependent diffusivity-to-mobility ratio (nonlinear relation) GaAs MESFET simulation and compare it to the constant ratio linear modeling. The results show that current overshoot and stable Gunn-domain formation occurred at a lower channel-impurity concentration for the field-dependent diffusivity-to-mobility ratio case. The transconductance and threshold voltage of a 1-µm gate-length MESFET are compared also.
ISSN:0018-9383
1557-9646
DOI:10.1109/T-ED.1987.23195