VB-6 continuous room-temperature laser operation of Al x Ga 1-x As-GaAs quantum well heterostructures grown on Si

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Bibliographic Details
Published in:IEEE transactions on electron devices 1987-11, Vol.34 (11), p.2380-2380
Main Authors: Deppe, D.G., Holonyak, N., Nam, D.W., Hsieh, K.C., Kaliski, R.W., Matyi, R.J., Lee, J.W., Shichijo, H., Epler, J.E., Burnham, R.D., Chung, H.F., Paoli, T.L.
Format: Article
Language:English
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ISSN:0018-9383
DOI:10.1109/T-ED.1987.23306