High–Energy‐Storage Density Capacitors of Bi ( Ni 1/2 Ti 1/2 ) O 3 – PbTiO 3 Thin Films with Good Temperature Stability

High–energy‐storage density capacitors with thin films of 0.5 Bi ( Ni 1/2 Ti 1/2 ) O 3 –0.5 PbTiO 3 ( BNT – PT ) were fabricated by chemical solution deposition technique on Pt / Ti / SiO 2 / Si substrates. The dense thin films with pure‐phase perovskite structure could be obtained by annealing at 7...

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Bibliographic Details
Published in:Journal of the American Ceramic Society 2013-07, Vol.96 (7), p.2061-2064
Main Authors: Xie, Zhenkun, Peng, Bin, Meng, Siqin, Zhou, Yuanyuan, Yue, Zhenxing
Format: Article
Language:English
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Summary:High–energy‐storage density capacitors with thin films of 0.5 Bi ( Ni 1/2 Ti 1/2 ) O 3 –0.5 PbTiO 3 ( BNT – PT ) were fabricated by chemical solution deposition technique on Pt / Ti / SiO 2 / Si substrates. The dense thin films with pure‐phase perovskite structure could be obtained by annealing at 750°C. High capacitance density (~1925 nF/cm 2 at 1 kHz) and extremely high‐energy density (~45.1 J/cm 3 ) under an electric field of 2250 kV/cm were achieved at room temperature. The energy‐storage density and efficiency varied little in a wide temperature range from −190°C to 250°C. The high–energy‐storage density and good temperature stability make BNT – PT films promising candidates for high power electric applications.
ISSN:0002-7820
1551-2916
DOI:10.1111/jace.12443