Temperature dependent scaling behavior and evolution of domain dynamics in low temperature sintered PZN–PZT ceramics

• Published in: Journal of the American Ceramic Society 2025-01
• Main Authors: Baby, Anagha, N. Shara, Sowmya, N. S., Reshma, S., Susanth, E. K., Sunny, V., Priyadarshini, Thangavelu, Karthik
• Format: Article
• Language: English
• ISSN: 0002-7820; 1551-2916
• DOI: 10.1111/jace.20361

A comprehensive investigation into the dynamic hysteresis behavior of the low temperature sintered 0.4PZN–0.6PZT ceramics across a wide range of electric field frequency, and temperature was carried out in the present study. Our findings from the electric field and frequency dependent scaling analysis at 303 K revealed distinct domain dynamics having three stages of polarization reversal mechanism with a breakdown frequency ( f b ) of 5 Hz. Temperature dependent scaling analysis till 503 K showcased the influence of thermal energy especially in the stage‐I and stage‐II of the polarization reversal mechanism resulting in enhanced domain wall mobility with reduced switching time at a lower electric field. The power‐law temperature scaling relations for hysteresis area 〈 A 〉, remanent polarization ( P r ), and coercivity ( E C ) took the form of A  ∝  T 0.1468 , P r  ∝  T −0.5577 , and E C  ∝  T −0.68272 , respectively. The decay of the derived exponent values with temperature corresponding to 〈 A 〉 , P r , and E C was minimal as compared to the other reported soft PZT and lead‐free systems. This study provided information on the influence of temperature toward domain wall motion, domain nucleation, and domain switching, and it will be useful for designing devices that demand high reliability and thermal stability.