Patterning performance of EB-X3 x-ray mask writer

An intensive study of the patterning performance of the EB-X3 revealed that the placement accuracy of a written image was degraded by the thermal effect originating from the temperature difference between the stage and the palette. An optimal writing procedure consisting of two temperature stabiliza...

Full description

Saved in:
Bibliographic Details
Published in:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2000-11, Vol.18 (6), p.3084-3088
Main Authors: Ohki, Shigehisa, Watanabe, Toshifumi, Takeda, Yuji, Morosawa, Tetsuo, Saito, Kenichi, Kunioka, Tatsuya, Kato, Junichi, Shimizu, Akira, Matsuda, Tadahito, Tsuboi, Shinji, Aoyama, Hajime, Watanabe, Hiroshi, Nakayama, Yoshinori
Format: Article
Language:English
Subjects:
Dynamic random access storage
Imaging techniques
LSI circuits
Masks
Optimization
Thermal effects
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:An intensive study of the patterning performance of the EB-X3 revealed that the placement accuracy of a written image was degraded by the thermal effect originating from the temperature difference between the stage and the palette. An optimal writing procedure consisting of two temperature stabilization steps was developed. This procedure enables the EB-X3 to attain an image placement accuracy of better than 10 nm (3σ). A critical dimension control of 7.4 nm (3σ) has been confirmed over a 25-mm-square field.
ISSN:0734-211X
1071-1023
1520-8567
DOI:10.1116/1.1319708