Growth of HgCdTe for long-wavelength infrared detectors using automated control from spectroscopic ellipsometry measurements

Hg 1−x Cd x Te is the leading material for high-performance long-wavelength (λ∼10–20 μ m ) infrared detectors. At these wavelengths, highly accurate compositional control (Δx⩽0.002) is required to achieve a particular device cutoff and the detector’s performance characteristics. Spectroscopic ellips...

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Bibliographic Details
Published in:Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures 2001-07, Vol.19 (4), p.1580-1584
Main Authors: Phillips, Jamie, Edwall, Dennis, Lee, Don, Arias, Jose
Format: Article
Language:English
Subjects:
Composition
Ellipsometry
Growth (materials)
Infrared detectors
Infrared spectroscopy
Molecular beam epitaxy
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Summary:Hg 1−x Cd x Te is the leading material for high-performance long-wavelength (λ∼10–20 μ m ) infrared detectors. At these wavelengths, highly accurate compositional control (Δx⩽0.002) is required to achieve a particular device cutoff and the detector’s performance characteristics. Spectroscopic ellipsometry has proven to be a highly accurate technique of measuring the HgCdTe composition during epitaxial growth. Here we present the growth of HgCdTe by molecular beam epitaxy using an automated control program using real-time feedback from spectroscopic ellipsometry measurements. Excellent control is demonstrated for more than 50 growth runs with a standard deviation of Δx=0.0004 observed for the error between the composition measured by ellipsometry and the target growth composition.
ISSN:0734-211X
1071-1023
1520-8567
DOI:10.1116/1.1374621