Molecular beam epitaxy growth and characterization of ZnTe:Cr2+ layers on GaAs(100)

The chromium-doped ZnTe layers were grown by molecular beam epitaxy technology on the GaAs substrates. The metallic chromium was used as a dopant. The characteristic emission of the Cr2+ ions that is incorporated into ZnTe epilayers was obtained. However, the attempt of doping by CrI3 has shown that...

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Bibliographic Details
Published in:Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena Microelectronics and nanometer structures processing, measurement and phenomena, 2001-07, Vol.19 (4), p.1483-1487
Main Authors: Sadofyev, Yu. G., Pevtsov, V. F., Dianov, E. M., Trubenko, P. A., Korshkov, M. V.
Format: Article
Language:English
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Summary:The chromium-doped ZnTe layers were grown by molecular beam epitaxy technology on the GaAs substrates. The metallic chromium was used as a dopant. The characteristic emission of the Cr2+ ions that is incorporated into ZnTe epilayers was obtained. However, the attempt of doping by CrI3 has shown that the halides induce a deterioration of the surface morphology and are inefficient dopants for II–VI semiconductors.
ISSN:1071-1023
1520-8567
DOI:10.1116/1.1383075